Hydrogenated amorphous-silicon thin films produced by ion plating
Journal Article
·
· Appl. Phys. Lett.; (United States)
Ion plating techniques have been used to produce amorphous-silicon thin films which contain up to 25 atomic percent hydrogen. The Si--H bond stretching mode observed for hydrogenated amorphous-silicon thin films produced by glow-discharge decomposition methods is also observed for these ion-plated films. Optical absorptivity measurements for ion-plated films give band-gap values between 1.58 and 1.90 eV.
- Research Organization:
- Department of Mechanical Engineering and Materials Science, Duke University, Durham, North Carolina 27706
- DOE Contract Number:
- AC03-79ET23035
- OSTI ID:
- 5417597
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 36:11; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
360603 -- Materials-- Properties
ABSORPTIVITY
AMORPHOUS STATE
CHARGED PARTICLES
CHEMICAL BONDS
CHEMICAL REACTIONS
DATA
DECOMPOSITION
DEPOSITION
ELECTRIC DISCHARGES
ELEMENTS
ENERGY GAP
FILMS
HYDROGENATION
INFORMATION
IONS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
QUANTITY RATIO
SEMIMETALS
SILICON
360601* -- Other Materials-- Preparation & Manufacture
360603 -- Materials-- Properties
ABSORPTIVITY
AMORPHOUS STATE
CHARGED PARTICLES
CHEMICAL BONDS
CHEMICAL REACTIONS
DATA
DECOMPOSITION
DEPOSITION
ELECTRIC DISCHARGES
ELEMENTS
ENERGY GAP
FILMS
HYDROGENATION
INFORMATION
IONS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
QUANTITY RATIO
SEMIMETALS
SILICON