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Improvement of toroidal plasma (TP) type sputtering for depositing Co-Cr films on plasma-free substrates

Journal Article · · IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (USA)
DOI:https://doi.org/10.1109/20.104464· OSTI ID:5944873
;  [1];  [2]
  1. Toyama Univ. (Japan). Faculty of Engineering
  2. Tokyo Inst. of Tech. (Japan). Faculty of Engineering

Co-Cr films for perpendicular recording have been deposited by the toroidal plasma (TP) type sputtering method with applying a magnetic field by a solenoid coil, or by attaching a magnet to the outer pole to change the plasma state during sputtering. By applying the magnetic field by the solenoid coil, discharge current, film thickness and film composition, saturation magnetization Ms of 480{approximately}800 emu/cc and coercivity Hc of 250 {approximately}350 Oe in the films depended on the plasma state. On the other hand, by attaching the magnet to the outer pole, the magnetic flux distribution in front of the target plane was significantly improved. Therefore, the applied voltage to electrodes was lower from 520 to 440 V at Ar gas pressure of 0.2 Pa. The erosion profile of targets was changed. The variation in the film thickness and the Co content over the whole film plane were reduced.

OSTI ID:
5944873
Journal Information:
IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (USA) Vol. 26:5; ISSN IEMGA; ISSN 0018-9464
Country of Publication:
United States
Language:
English