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A comparative study of CoZrNb and NiFe targets in discharge and sputtering using plasma confining type and magnetron sputtering method

Journal Article · · IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (USA)
DOI:https://doi.org/10.1109/20.104422· OSTI ID:5779119
;  [1];  [2]
  1. Toyama Univ. (Japan). Faculty of Engineering
  2. Tokyo Inst. of Tech. (Japan). Faculty of Engineering

CoZrNb and NiFe films have been deposited by a plasma confining type of magnetron sputtering method which can highly improve the utilization efficiency of magnetic alloy target with high permeability and completely suppress the bombardment of high energy {gamma}-electrons to substrate. By applying an auxiliary solenoid magnetic field H{sub E} perpendicular to the target plane, the target utilization efficiencies in volume of whole body for CoZrNb, and NiFe targets were improved from 32 to 51%, and from 25 to 41%, respectively. In both targets, the maximum deposition rates were above 0.2 {mu}m/min. Al CoZrNb films deposited by this method were amorphous. All NiFe films deposited by this method were composed of fcc phase crystallites with NiFe(111) plane parallel to the film plane. For CoZrNb films, with applying H{sub E}, the saturation magnetization 4{pi}Ms, and the coercivity Hc varied from 11.5 to 14 kG, and from 0.1 to 0.9 Oe, respectively. On the other hand, for NiFe films, 4{pi}Ms, and Hc were constants of about 9.5 kG, and about 0.5O e, respectively.

OSTI ID:
5779119
Journal Information:
IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (USA) Vol. 26:5; ISSN IEMGA; ISSN 0018-9464
Country of Publication:
United States
Language:
English

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