Deep-level transient spectroscopy studies of minority carrier traps in neutron-irradiated silicon

Journal Article · Fri Mar 15 00:00:00 EST 1985 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.334336· OSTI ID:5941547

Tokuda, Y; Usami, A

Measurements of minority carrier traps produced in silicon by neutron irradiation at room temperature were performed using deep-level transient spectroscopy (DLTS), and these results were compared with those in 2-MeV electron-irradiated silicon. One electron trap (E/sub c/-0.29 eV) and one hole trap (E/sub v/+0.43 eV) were observed in neutron-irradiated p- and n-type silicon, respectively, which were also observed in the 2-MeV electron case. Furthermore, it was found that the isochronal annealing behavior of these minority carrier traps between the neutron and the 2-MeV electron case coincided with each other. The present results about minority carrier traps and previously reported ones about majority carrier traps indicated that the neutron damage was similar to the electron damage as far as the DLTS measurements are concerned.

• Research Organization: Department of Electronics, Aichi Institute of Technology, Yagusa, Toyota 470-03, Japan
• OSTI ID: 5941547
• Journal Information: J. Appl. Phys.; (United States), Vol. 57:6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
CHARGE CARRIERS
DEEP LEVEL TRANSIENT SPECTROSCOPY
PHYSICAL RADIATION EFFECTS
TRAPS
ANNEALING
ELECTRON COLLISIONS
MEV RANGE 01-10
NEUTRON DIFFRACTION
NEUTRONS
BARYONS
COHERENT SCATTERING
COLLISIONS
DIFFRACTION
ELEMENTARY PARTICLES
ELEMENTS
ENERGY RANGE
FERMIONS
HADRONS
HEAT TREATMENTS
MEV RANGE
NUCLEONS
RADIATION EFFECTS
SCATTERING
SEMIMETALS
SPECTROSCOPY
360605* - Materials- Radiation Effects