Detection of minority carrier traps in p-type 4H-SiC
- Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo, Kyoto 615-8510 (Japan)
Contrarily to the case of n-type 4H-SiC, very little is known about the presence of minority carrier traps in p-type epilayers. In this study, we performed the electrical characterization of as-grown, electron irradiated, and thermally oxidized p-type 4H-SiC, by using minority carrier transient spectroscopy. Four minority carrier traps are reported in 1.6–2.3 eV energy range above the valence band edge (E{sub V}). Particular emphasis is given to the mid-gap minority carrier trap (EH{sub 6∕7}) and to its correlation to an energetically close mid-gap majority carrier trap (HK4)
- OSTI ID:
- 22283073
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 9 Vol. 104; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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