Influence of carrier trapping on radiation detection properties in $\mathrm{CVD}$ grown 4H-SiC epitaxial layers with varying thickness up to 250&nbsp;µm

Kleppinger, Joshua W.; Chaudhuri, Sandeep K.; Karadavut, OmerFaruk; Nag, Ritwik; Mandal, Krishna C.

doi:10.1016/j.jcrysgro.2022.126532

Influence of carrier trapping on radiation detection properties in $$\mathrm{CVD}$$ grown 4H-SiC epitaxial layers with varying thickness up to 250 µm

Journal Article · Sat Jan 22 00:00:00 EST 2022 · Journal of Crystal Growth

DOI:https://doi.org/10.1016/j.jcrysgro.2022.126532· OSTI ID:1977287

Kleppinger, Joshua W. ^[1]; ^[2]; ^[2]; Nag, Ritwik ^[2]; ^[2]

University of South Carolina, Columbia, SC (United States); OSTI
University of South Carolina, Columbia, SC (United States)

We report low doped n-type 4H-SiC epitaxial layers of thickness 50, 150, and 250 µm grown by hot wall chemical vapor deposition were used to fabricate Ni/4H-SiC Schottky radiation detectors. The epitaxial layers were grown on the (0001) face of highly conductive bulk 4H-SiC substrates 8° offcut towards the $$\langle 11\bar{2}1\rangle$$ direction. The 50, 150, and 250 µm thick epilayer detectors, under optimized settings, showed energy resolutions of 2.0%, 0.78%, and 0.63%, respectively for 5.48 MeV alpha particles. Deep level transient spectroscopy studies showed that the observed variation in the detector resolution is linked to the defect parameters in the devices. Least-squares fitting of the bias dependence of the charge collection efficiency according to a drift-diffusion model, revealed minority carrier diffusion lengths of 16, 10, and 9.2 µm, respectively, implying that the detectors are not limited by minority carrier trapping. The detector performance was observed to be primarily dependent on the concentration and capture cross-sections of the lifetime killing electron traps Z_1/2and EH_6/7.

View Accepted Manuscript (DOE)

Research Organization:: UT-Battelle LLC/ORNL, Oak Ridge, TN (United States); University of South Carolina, Columbia, SC (United States)

Sponsoring Organization:: USDOE Office of Nuclear Energy (NE); USDOE Office of Nuclear Energy (NE), Nuclear Energy University Program (NEUP); University of South Carolina

Grant/Contract Number:: AC07-05ID14517; NE0008662

OSTI ID:: 1977287

Alternate ID(s):: OSTI ID: 1842848

Journal Information:: Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Journal Issue: C Vol. 583; ISSN 0022-0248

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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36 MATERIALS SCIENCE
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Influence of carrier trapping on radiation detection properties in $$\mathrm{CVD}$$ grown 4H-SiC epitaxial layers with varying thickness up to 250 µm

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