High power and narrow spectral linewidth 1. 5. mu. m MQW-DFB-LD's low FM dip frequency

Journal Article · Wed Oct 31 23:00:00 EST 1990 · IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA)

DOI:https://doi.org/10.1109/68.63218· OSTI ID:5937441

Kitamura, M; Yamazaki, H; Ono, T; Sasaki, T; Hamao, N; Mito, I ^[1]

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1. Opto-Electronics Research Lab., NEC Corp., Kawasaki 213 (JP)

FM response as well as spectral linewidth are characterized for 1.5 {mu}m multiple quantum well distributed feedback laser diodes (MQW-DFB-LD's). It was experimentally demonstrated that the FM dip frequency where AM-FM phase delay rotates by 180{degrees} was lowered with reduced thermal resistance and reduced threshold current density, due to reduced thermal effect and enhanced carrier effect. 1.5 {mu}m MQW-DFB-LD's have been developed with lower than 20 kHz FM dip frequency and relatively flat FM response, as well as less than 1 MHz spectral linewidth in the 10--35 mW light output power range.

• OSTI ID: 5937441
• Journal Information: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA) Vol. 2:11; ISSN IPTLE; ISSN 1041-1135
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ELECTROMAGNETIC RADIATION
FEEDBACK
FREQUENCY MODULATION
FREQUENCY RANGE
HETEROJUNCTIONS
INFRARED RADIATION
JUNCTIONS
LASERS
LINE WIDTHS
MHZ RANGE
MHZ RANGE 01-100
MODULATION
NEAR INFRARED RADIATION
POWER
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLID STATE LASERS
TEMPERATURE EFFECTS