Extremely narrow spectral linewidth and low chirping of the MQW-DFB-PPIBH laser diode

Journal Article · Sat Sep 01 00:00:00 EDT 1990 · IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (USA)

DOI:https://doi.org/10.1109/3.102622· OSTI ID:5882490

Kakimoto, S; Nakajima, Y; Sakakibara, Y; Watanabe, H; Takemoto, A; Yoshida, N ^[1]

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1. Optoelectronic and Microwave Devices R and D Laboratory, Mitsubishi Electric Corporation, Hyogo (JP)

A multiple quantum-well (MQW) structure was applied to the active layer of the distributed feedback (DFB) p-substrate partially inverted buried heterostructure (PPIBH) laser diode. This paper reports that the threshold current as low as 9 mA, the side-mode suppression ratio higher than 45 dB, an extremely narrow spectral linewidth of 1.1 MHz, and chirping as low as 2.8 {Angstrom} (at {minus}20 dB) at 2 Gb/s NRZ modulation have been achieved in the 300-{mu}m length MQW-DFB-PPIBH laser diode.

• OSTI ID: 5882490
• Journal Information: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (USA) Vol. 26:9; ISSN 0018-9197; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
657002 -- Theoretical & Mathematical Physics-- Classical & Quantum Mechanics
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CURRENTS
EFFICIENCY
ELECTRIC CURRENTS
FREE ELECTRON LASERS
FREQUENCY MODULATION
HETEROJUNCTIONS
JUNCTIONS
LASERS
MODULATION
OPTICAL PROPERTIES
PHOTODIODES
PHYSICAL PROPERTIES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SPECTRAL REFLECTANCE
THRESHOLD CURRENT