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The effect of ionizing radiation on sol-gel ferroelectric PZT capacitors

Conference · · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)
OSTI ID:5933649
; ;  [1]
  1. Arizona State Univ., Tempe, AZ (USA). Dept. of Chemical, Bio and Materials Science Engineering

Ferroelectric (FE) thin-film capacitors were irradiated to 100 Mrad(Si) with 10-keV x-rays. Some of the FE hysteresis loops show distortion at 5 Mrad(Si). The type and degree of distortion is dependent upon the polarization state and/or the applied field during irradiation. Preliminary results indicate that a fraction of the radiation-induced damage can be removed simply by cycling the FE capacitor with a 20-Khz square wave. The amount of damage removed is dependent upon the radiation conditions.

OSTI ID:
5933649
Report Number(s):
CONF-900723--
Journal Information:
IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Vol. 37:6; ISSN 0018-9499; ISSN IETNA
Country of Publication:
United States
Language:
English