Radiation hardness evaluation of thin film ferroelectric capacitors
Conference
·
OSTI ID:5825847
Ferroelectric capacitor structures have been evaluated in total dose, dose-rate and cosmic ray environments. The capacitors were found to maintain polarization following an exposure of approx.5 Mrad (Si), approx.1 x 10/sup 11/ rad(Si)/s and approx.6 x 10/sup 6/ Cf-252 fission fragments per cm/sup 2/. The capacitors show minimal degradation in the P versus E hysteresis curve following approx.10 Mrad(Si), approx.1 x 10/sup 11/ rad(Si)/s and approx.6 x 10/sup 6/ Cf-252 fission fragments per cm/sup 2/. In addition, no heavy ion induced hard errors were observed for capacitor bias levels below the intrinsic breakdown voltage of 20 V.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA); Krysalis Microelectronics, Albuquerque, NM (USA); Naval Surface Weapons Center, Silver Spring, MD (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5825847
- Report Number(s):
- SAND-87-2501C; CONF-871032-1; ON: DE88001357
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
CAPACITORS
DATA
ELECTRICAL EQUIPMENT
EQUIPMENT
EXPERIMENTAL DATA
INFORMATION
IRRADIATION
MEMORY DEVICES
NUMERICAL DATA
PHYSICAL RADIATION EFFECTS
POLARIZATION
RADIATION EFFECTS
360605 -- Materials-- Radiation Effects
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
CAPACITORS
DATA
ELECTRICAL EQUIPMENT
EQUIPMENT
EXPERIMENTAL DATA
INFORMATION
IRRADIATION
MEMORY DEVICES
NUMERICAL DATA
PHYSICAL RADIATION EFFECTS
POLARIZATION
RADIATION EFFECTS