A SIMS study of the filling of traps for deuterium in krypton-implanted nickel
A new technique for depth profiling inert-gas atoms in metals using a secondary ion mass spectrometer has provided experimental confirmation of mathematical model simulations of the filling of traps by deuterium diffusing one dimension. The depth profile when traps are being filled by diffusion from one direction has a characteristically steep leading edge, indicating that almost all the traps are filled before the diffusion front moves further into the metal. Annealing at a higher temperature reduces the steep leading gradient, demonstrating that deuterium leaves the completely filled region and diffuses into some of the unfilled traps. At saturation, the depth distribution of the traps which hold deuterium at room temperature matches that of the implanted krypton.
- Research Organization:
- Physics Dept., Augustana College, Rock Island, IL (US); Materials Research Lab., Univ. of Illinois, Urbana, IL (US); Materials Science Div., Argonne National Lab., Argonne, IL (US)
- OSTI ID:
- 5933255
- Journal Information:
- Scr. Metall.; (United States), Vol. 22:4
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
74 ATOMIC AND MOLECULAR PHYSICS
DEUTERIUM
DIFFUSION
KRYPTON
NICKEL
ATOM TRANSPORT
ION IMPLANTATION
ANNEALING
EXPERIMENTAL DATA
HIGH TEMPERATURE
MATHEMATICAL MODELS
RESONANCE IONIZATION MASS SPECTROSCOPY
TRAPPING
DATA
ELEMENTS
FLUIDS
GASES
HEAT TREATMENTS
HYDROGEN ISOTOPES
INFORMATION
ISOTOPES
LIGHT NUCLEI
MASS SPECTROSCOPY
METALS
NEUTRAL-PARTICLE TRANSPORT
NONMETALS
NUCLEI
NUMERICAL DATA
ODD-ODD NUCLEI
RADIATION TRANSPORT
RARE GASES
SPECTROSCOPY
STABLE ISOTOPES
TRANSITION ELEMENTS
360102* - Metals & Alloys- Structure & Phase Studies
640302 - Atomic
Molecular & Chemical Physics- Atomic & Molecular Properties & Theory