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Superconducting and electrical properties of rhenium nitride and amorphous rhenium prepared by ion implantation

Journal Article · · J. Low Temp. Phys.; (United States)
DOI:https://doi.org/10.1007/BF00681843· OSTI ID:5932646
Different rhenium nitrides were prepared by homogeneous implantation of nitrogen ions into rhenium thin films at various temperatures as a function of N concentration. At 9 at % N news x-ray lines appeared in addition to the hcp rhenium phase. The formation of this phase, which could not be identified, was accompanied by a large increases in stress, of the order of 10/sup 11/ dynes/cm/sup 2/. Rhenium nitride with fcc structure was formed between 13 and 50 at %. For ReN a lattice parameter of 4.021 +- 0.002 A, a maximum T/sub c/ value of 4.5--5.0 K, and a resistivity rho/sub R/T of 250 ..mu cap omega..-cm were obtained. Both rhenium nitride phases decomposed above 645 K. An x-ray amorphous phase was obtained after implanation of 40 at % N at LNT. This amorphous phase had a T/sub c/ value of 6.0 K and a rho/sub R/T value of 300 ..mu cap omega..-cm. Transformation into an amorphous Re phase was also observed after implantation of 20 at % P. The maximum T/sub c/ value of this phase was 7 K. This phase decomposed at about 925 K.
Research Organization:
Kernforschungszentrum Karlsruhe, Institute fuer Angewandte Kernphysik, I, Karlsruhe, Federal Repbulic of Germany
OSTI ID:
5932646
Journal Information:
J. Low Temp. Phys.; (United States), Journal Name: J. Low Temp. Phys.; (United States) Vol. 50:1; ISSN JLTPA
Country of Publication:
United States
Language:
English

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