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Disorder effects in ion-implanted niobium thin films

Journal Article · · Phys. Rev. B: Condens. Matter; (United States)
New data on the depression of T/sub c/ related to disorder effects for N/sup +/ ion-implanted niobium films are presented, extending up to a resistivity rho/sub 0/approx. =150 ..mu cap omega.. cm. The results are discussed in the framework of the existing theories. Tunneling measurements on the same ion-implanted films show a fall of the measured value of 2..delta..(0)/kT/sub c/ below the BCS value for very disordered films.
Research Organization:
Istituto di Cibernetica del Consiglio Nazionale delle Richerche, 80072 Arco Felice, Italy
OSTI ID:
6059799
Journal Information:
Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 31:5; ISSN PRBMD
Country of Publication:
United States
Language:
English