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Superconducting and normal properties of NbN produced by ion implantation of niobium thin films

Thesis/Dissertation ·
OSTI ID:6461965
Niobium films (120 nm thick) deposited by electron beam evaporation were implanted near 5K with 100 keV N/sub 2//sup +/ ions to maximum fluences of 4 to 7 x 10/sup 17/ N/cm/sup 2/. STEM diffraction patterns showed a structural phase transformation from the initial Nb lattice with (110) fiber texture (bcc, a/sub 0/ = 3.30 A) to randomly oriented delta-NbN (fcc, a/sub 0/ = 4.35-4.39 A), via an intermediate, highly disordered Nb-(interstitial N) structure (bcc, maximum a/sub 0/ = 3.42 A). Decreases in transition temperature T/sub c/ from 9 K to a minimum of 3K, and rapid linear increases in residual resistivity rho/sub 10/, were observed to fluences of 1.0-1.5 x 10/sup 17/ N/cm/sup 2/, and were attributed to the accumulation of radiation-induced defects. Continued implantation resulted in delta-NbN formation and T/sub c/ increases to maximum values of 9-10 K which were achieved at fluences from 3.5 to 5.0 x 10/sup 17/ N/cm/sup 2/, corresponding to average substoichiometric N/Nb ratios of 0.52-0.75, at which point the phase transformation was complete. The delta-NbN formation was accompanied by significant lattice reordering and grain growth. At higher fluences, gradual T/sub c/ declines (by 1-2 K), and the sharp rises in rho/sub 10/, were observed, possibly due to film sputtering. Large reductions in flux pinning force density to fluences which produced minimum T/sub c/ values (about 1 x 10/sup 17/ N/cm/sup 2/) were attributed to the destruction of strong grain boundary pinning centers by the ion bombardment.
Research Organization:
Florida State Univ., Tallahassee (USA)
OSTI ID:
6461965
Country of Publication:
United States
Language:
English