Studies of a-Si:H growth mechanism, using deuterium, by rutherford recoil measurement

Conference · Tue May 01 04:00:00 EDT 1984 · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)

OSTI ID:5902812

Kuboi, O; Aratani, M; Hashimoto, M; Hayashi, S; Kohno, I; Nagai, M; Nozaki, T; Yanokura, M; Yatsurugi, Y

a-Si:H were grown from silane and disilane by RF glow discharge. Deuterium (D) was used as a tracer in this investigation, in which four gas mixtures (SiH/sub 4/+D/sub 2/, SiD/sub 4/+H/sub 2/, Si/sub 2/H/sub 6/+D/sub 2/, and Si/sub 2/D/sub 6/+H/sub 2/) were employed. a-Si:H so produced were analyzed for H and D by Rutherford recoil measurement to determine whether these elements came from silanes or the dilution gas. When the RF power is low, much larger proportion of hydrogen atoms in silanes than in the dilution gas is found in a-Si:H. On the other hand, at high RF power, an excessive amount of D from the dilution gas, D/sub 2/, appears in a-Si:H.

• Research Organization: Komatsu Electronic Metals Co., Ltd., Hiratsuka, Kanagawa
• OSTI ID: 5902812
• Report Number(s): CONF-840561-
• Conference Information: Journal Name: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CRYSTAL GROWTH METHODS
DEUTERIDES
DEUTERIUM
DEUTERIUM COMPOUNDS
DIRECT ENERGY CONVERTERS
ELASTIC SCATTERING
ELECTRIC DISCHARGES
ELEMENTS
EQUIPMENT
GLOW DISCHARGES
HYDRIDES
HYDROGEN COMPOUNDS
HYDROGEN ISOTOPES
ISOTOPES
LIGHT NUCLEI
MEASURING METHODS
NUCLEI
ODD-ODD NUCLEI
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
RF SYSTEMS
RUTHERFORD SCATTERING
SCATTERING
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
STABLE ISOTOPES