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Title: Distinctive features of the crystallization of GaSb epitaxial layers from melts of the Cd-Sn system

Journal Article · · Inorg. Mater. (Engl. Transl.); (United States)
OSTI ID:5896302

The authors use methods of physicochemical analysis to investigate the GaSb-Cd-Sn cross sections of the phase diagram of the quaternary Ga-Sb-Cd-Sn system to choose the conditions for liquid-phase epitaxy of GaSb from mixed metallic melts of Cd with Sn, making it possible to obtain GaSb epitaxial layers doped concurrently with group-II and IV elements. Using differential thermal, x-ray crystallographic, and microstructural analyses as well as microhardness measurements, the authors studied the polythermal cross sections of the GaSb-Cd-Sn system. The redistribution of Sn and Cd atoms in the GaSb lattice as the temperature of the onset of epitaxial growth varies has a determining effect on the electrical, optical and structural properties of the epitaxial layers.

Research Organization:
M. V. Lomonosov Moscow Institute of Fine Chemical Technology, USSR
OSTI ID:
5896302
Journal Information:
Inorg. Mater. (Engl. Transl.); (United States), Vol. 23:1; Other Information: Translated from Izv. Akad. Nauk SSSR, Neorg. Mater.; 23: No. 1, 17-21(Jan 1987)
Country of Publication:
United States
Language:
English