Morphology and crystallography of CdS-CdTe double layers on various GaAs surfaces

Journal Article · Thu Nov 01 04:00:00 EST 1979 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.325847· OSTI ID:5886197

Bettini, M; Brandt, G

Epitaxial double layers of CdS and CdTe have been grown on GaAs by close-spaced chemical vapor transport, to study the growth of CdTe on various CdS surfaces. Since the (00.1) axis of CdS aligns to one of the <111>A axes of the GaAs substrate, the deposition of CdS on )111)A, )110), and )100) GaAs surfaces yields approximately the )00.1), )10.3), and )11.1) CdS surfaces. On )111)A and slightly inclined substrates the CdS-CdTe layers (2--10 ..mu..m thick) grow uniformly thick with smooth surfaces. On the )110) and )100) faces the CdTe layers show a scale structure through the whole layer, which is approximately aligned to one of the <111> axes of the substrate. X-ray investigations reveal three- and two-dimensional lattice defects in the CdTe layer such as twinning, cubic-hexagonal mixture, stacking faults, fiber texture, and polycrystallinity. The number of defects increases in layers grown on )111)A to )110) and to )100). The most perfect layers on )111)A faces and slightly inclined ones have a cubic structure with twinning about the growth direction. On )110) and )100) faces, the (00.1) and (111) stacking axes of the three lattices are slightly tilted to each other. The tilt angle can be explained by an accommodation of the lattice mismatch at the interface in such a way that the stacking planes join together continuously at the boundaries.

• Research Organization: Institut fuer Angewandte Festkoerperphysik der Fraunhofer-Gesellschaft, D 7800 Freiburg, Eckerstrasse 4, Federal Republic of Germany
• OSTI ID: 5886197
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 50:11; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ARSENIC COMPOUNDS
ARSENIDES
CADMIUM COMPOUNDS
CADMIUM SULFIDES
CADMIUM TELLURIDES
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CRYSTALLOGRAPHY
CRYSTALS
DATA
DEPOSITION
DIRECT ENERGY CONVERTERS
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
INORGANIC PHOSPHORS
LAYERS
PHOSPHORS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
POLYCRYSTALS
SOLAR CELLS
STACKING FAULTS
SUBSTRATES
SULFIDES
SULFUR COMPOUNDS
SURFACE COATING
SURFACES
TELLURIDES
TELLURIUM COMPOUNDS
TWINNING