Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

High resolution lattice imaging of the CdS/CdTe interface

Conference · · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
OSTI ID:5379683
The authors report here the first high resolution transmission electron microscopy (HRTEM) imaging of an electrically characterized solar cell structure. An undoped CdS film was thermally evaporated to a thickness of 1 ..mu..m and a resistivity of about 1 ohm-cm onto a freshly cleaved CdTe (110) surface held at 135/sup 0/C. TEM samples were prepared by ion-milling to 100-200 A thickness at the interface area in cross section. The micrograph shown was obtained with a Philips EM400ST microscope at 900,000X magnification. The projection is along the <110> and each image spot (white dots) in the micrograph corresponds to a Cd-Te or Cd-S atom pair. The CdS film has a cubic structure (a /SUB o/ = 5.85 A) as determined from an electron diffraction pattern. The film maintains the same orientation as the CdTe substrate. The lattice mismatch along the interface ( <100> direction) is 10% and is accomodated by the stacking faults in the CdS film and steps at the interface. On the average, an extra (111) CdS plane (inclined 35/sup 0/ to the interface) is expected for every ten CdTe (111) planes; within the region of the photograph the actual number is one in every seven. The heterojunction is characterized by V /SUB oc/ = 0.62 V and J /SUB sc/ = 12 mA/cm/sup 2/ at 85 mW/cm/sup 2/ simulated sunlight; J /SUB sc/ is reduced by the series resistance of the undoped CdS film.
Research Organization:
Department of Materials Science and Engineering, Stanford Univ., Stanford, CA 94305
OSTI ID:
5379683
Report Number(s):
CONF-820906-
Conference Information:
Journal Name: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
Country of Publication:
United States
Language:
English