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X-ray imaging camera tube using sputter-deposited CdTe/CdS heterojunction

Journal Article · · IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States)
DOI:https://doi.org/10.1109/16.182507· OSTI ID:6483660
; ;  [1];  [2]
  1. Hamamatsu Photonics Co., Iwatagun Shizuokaken (Japan)
  2. Shizuoka Univ. (Japan)
Cadmium Sulfide (CdS) and Cadmium Telluride (CdTe) heterojunction devices have been fabricated for the first time by RF sputter deposition method for application to X-ray imaging sensors. The electrical resistivities of sputter-deposited polycrystalline CdS and CdTe films are greater than 10[sub 6][Omega] [center dot] cm and 10[sup 9] [Omega] [center dot] cm, respectively. The structures of CdS and CdTe films are wurtzite type with a preferential orientation of (002) plane, and zincblende type with a preferential orientation of (111) plane parallel to the substrate, respectively The fabricated CdS/CdTe heterojunction sensor shows a good diode characteristic and a high sensitivity to X-ray radiation. An X-ray imaging camera tube consisting of CdS/CdTe heterojunction photoconductive target shows three times larger responsivity to X-rays than the conventional PbO X-ray tube. The dark current density of the device is observed to be lower than 10 nA/cm[sup 2] at 20 V of target voltage at room temperature.
OSTI ID:
6483660
Journal Information:
IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States) Vol. 40:2; ISSN 0018-9383; ISSN IETDAI
Country of Publication:
United States
Language:
English