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CdSxTe1-x Alloying in CdS/CdTe Solar Cells

Conference ·
A CdS{sub x}Te{sub 1-x} layer forms by interdiffusion of CdS and CdTe during the fabrication of thin film CdTe photovoltaic (PV) devices. The CdS{sub x}Te{sub 1-x} layer is thought to be important because it relieves strain at the CdS/CdTe interface that would otherwise exist due to the 10% lattice mismatch between these two materials. Our previous work has indicated that the electrical junction is located in this interdiffused CdS{sub x}Te{sub 1-x} region. Further understanding, however, is essential to predict the role of this CdS{sub x}Te{sub 1-x} layer in the operation of CdS/CdTe devices. In this study, CdS{sub x}Te{sub 1-x} alloy films were deposited by radio-frequency magnetron sputtering and coevaporation from CdTe and CdS sources. Both radio-frequency-magnetron-sputtered and coevaporated CdS{sub x}Te{sub 1-x} films of lower S content (x < 0.3) have a cubic zincblende (ZB) structure akin to CdTe, whereas those of higher S content have a hexagonal wurtzite (WZ) structure like that of CdS. Films become less preferentially oriented as a result of a CdCl{sub 2} heat treatment at {approx}400 C for 5 min. Films sputtered in a 1% O{sub 2}/Ar ambient are amorphous as deposited, but show CdTe ZB, CdS WZ, and CdTe oxide phases after a CdCl{sub 2} heat treatment. Films sputtered in O{sub 2} partial pressure have a much wider bandgap than expected. This may be explained by nanocrystalline size effects seen previously for sputtered oxygenated CdS (CdS:O) films.
Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
DOE Contract Number:
AC36-08GO28308
OSTI ID:
1043774
Report Number(s):
NREL/CP-5200-51737
Country of Publication:
United States
Language:
English

References (4)

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journal July 2002
Phase Diagram of the CdS-CdTe Pseudobinary System journal August 1973
Optical Energy Gap of the Mixed Crystal CdS x Te 1- x journal October 1973