Trapped vortex memory cells
Journal Article
·
· Appl. Phys. Lett.; (United States)
A memory cell is proposed which uses vortices in type-II superconductor thin film as information bits. In the memory cell, vortices are generated by coincident current in two superconductor lines and are read out by a Josephson junction. Preliminary experimental results on vortex generation and detection are also reported.
- Research Organization:
- Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation 3-9-11, Midoricho, Musashino-shi, Tokyo 180, Japan
- OSTI ID:
- 5886034
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 39:12; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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