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Trapped vortex memory cells

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.92638· OSTI ID:5886034
A memory cell is proposed which uses vortices in type-II superconductor thin film as information bits. In the memory cell, vortices are generated by coincident current in two superconductor lines and are read out by a Josephson junction. Preliminary experimental results on vortex generation and detection are also reported.
Research Organization:
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation 3-9-11, Midoricho, Musashino-shi, Tokyo 180, Japan
OSTI ID:
5886034
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 39:12; ISSN APPLA
Country of Publication:
United States
Language:
English

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