Abrikosov vortex memory
Journal Article
·
· Appl. Phys. Lett.; (United States)
A nondestructive readout random access memory (RAM) cell based on the use of Abrikosov vortices in thin-film type-II superconductors is newly designed and experimentally tested. The cell occupies an area of 30 x 60 ..mu..m/sup 2/ with a 5-..mu..m design rule. Proper memory cell operation is achieved in the so-called 1, -1 mode using the shift saturation effect, which occurs on the shift value characteristics of the sense gate threshold curves as a function of the write currents. This is the first Abrikosov vortex RAM cell to operate properly. The write current level has been reduced one order of magnitude using a Pb/In/Au film co-evaporated at 90 K for the vortex storage region.
- Research Organization:
- NTT Atsugi Electrical Communication Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa Pref., 243-01, Japan
- OSTI ID:
- 5273545
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 47:7; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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OSTI ID:6546376
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· IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States)
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Related Subjects
420201* -- Engineering-- Cryogenic Equipment & Devices
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
DESIGN
ELEMENTS
FABRICATION
FILMS
GOLD
INDIUM
LEAD
LOW TEMPERATURE
MEMORY DEVICES
METALS
OPERATION
SATURATION
SUPERCONDUCTING DEVICES
SUPERCONDUCTING FILMS
SUPERCONDUCTORS
THIN FILMS
TRANSITION ELEMENTS
TYPE-II SUPERCONDUCTORS
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
DESIGN
ELEMENTS
FABRICATION
FILMS
GOLD
INDIUM
LEAD
LOW TEMPERATURE
MEMORY DEVICES
METALS
OPERATION
SATURATION
SUPERCONDUCTING DEVICES
SUPERCONDUCTING FILMS
SUPERCONDUCTORS
THIN FILMS
TRANSITION ELEMENTS
TYPE-II SUPERCONDUCTORS