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Abrikosov vortex memory

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.96028· OSTI ID:5273545
A nondestructive readout random access memory (RAM) cell based on the use of Abrikosov vortices in thin-film type-II superconductors is newly designed and experimentally tested. The cell occupies an area of 30 x 60 ..mu..m/sup 2/ with a 5-..mu..m design rule. Proper memory cell operation is achieved in the so-called 1, -1 mode using the shift saturation effect, which occurs on the shift value characteristics of the sense gate threshold curves as a function of the write currents. This is the first Abrikosov vortex RAM cell to operate properly. The write current level has been reduced one order of magnitude using a Pb/In/Au film co-evaporated at 90 K for the vortex storage region.
Research Organization:
NTT Atsugi Electrical Communication Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa Pref., 243-01, Japan
OSTI ID:
5273545
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 47:7; ISSN APPLA
Country of Publication:
United States
Language:
English

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