Highly Stable Si Atomic Line Formation on the {beta} -SiC(100) Surface

Journal Article · Mon Sep 01 04:00:00 EDT 1997 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.79.2498· OSTI ID:587134

Soukiassian, P; Soukiassian, P; Semond, F; Semond, F ^[1]; Mayne, A; Dujardin, G ^[2]

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1. Departement de Physique, Universite de Paris-Sud, 91405 Orsay Cedex (France)
2. Laboratoire de Photophysique Moleculaire, Batiment 213, Universite de Paris-Sud, 91405 Orsay Cedex, (France); How Narrow is the Linewidth of Parametric X-Ray Radiation?

We use scanning tunneling microscopy to evidence the controlled formation of straight, very long, and highly stable Si atomic lines self-organizing on the {beta}{minus}SiC(100) surface. These atomic channels, which are composed of Si dimers, form at the phase transition between the 3{times}2 and c(4{times}2) reconstructions by selective Si atom organization. The presence of Si atomic lines is found to coincide systematically with a lateral mismatch between the c(4{times}2) Si-dimer rows. Their number and spacing are mediated by annealing time and temperature, resulting in unprecedented arrangements ranging from a very large superlattice to a single isolated atomic line. {copyright} {ital 1997} {ital The American Physical Society}

• OSTI ID: 587134
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 13 Vol. 79; ISSN 0031-9007; ISSN PRLTAO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CRYSTAL STRUCTURE
CRYSTALS
PHASE TRANSFORMATIONS
SILICON CARBIDES
SURFACES