Structural determination of {beta}-SiC(100)-{ital c}(2{times}2) from C-1{ital s} surface-core-exciton and Si-2{ital p} absorption

Journal Article · Thu Feb 01 04:00:00 EST 1996 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.76.991· OSTI ID:278815

Long, J P; Bermudez, V M; Ramaker, D E ^[1]

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1. Naval Research Laboratory, Washington, DC 20375 (United States)

The marked polarization dependences of two C-1{ital s} surface-core-exciton transitions{emdash}as revealed by near-edge x-ray absorption fine structure on single-domain {beta}-SiC(100)-{ital c}(2{times}2){emdash}are used, together with Si-2{ital p} absorption and molecular orbital cluster calculations, to settle the long-standing controversy over the structure of this surface. The surface is terminated with staggered rows of unusual, nearly triply-bonded C dimers bridging underlayer Si dimers. Resonant valence-band photoemission accompanying C-1{ital s} exciton autoionization reveals directly the electronic structure of the C dimers. {copyright} {ital 1996 The American Physical Society.}

• Research Organization: Brookhaven National Laboratory
• DOE Contract Number: AC02-76CH00016
• OSTI ID: 278815
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 6 Vol. 76; ISSN 0031-9007; ISSN PRLTAO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION SPECTRA
CHEMICAL BONDS
CRYSTAL STRUCTURE
EXAFS
POLARIZATION
SILICON CARBIDES
SURFACE PROPERTIES
X-RAY SPECTROSCOPY