Temperature-Induced Semiconducting {ital c}(4 {times} 2) {Leftrightarrow} Metallic (2 {times} 1) Reversible Phase Transition on the {beta} -SiC(100) Surface

Journal Article · Sat Nov 01 04:00:00 EST 1997 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.79.3700· OSTI ID:554003

Aristov, V Y; Douillard, L; Fauchoux, O; Soukiassian, P ^[1]

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1. Commissariat a l`Energie Atomique, DSM-DRECAM-SRSIM, Batiment 462, Centre d`Etudes de Saclay, 91191 Gif sur Yvette Cedex (France)

We use combined variable temperature scanning tunneling microscopy and spectroscopy, and angle-resolved photoemission spectroscopy experiments to study transition between two {beta}-SiC(100) surface structures. We observe a reversible temperature-dependent phase transition from a semiconducting c(4{times}2) surface at 25{degree}C to a metallic 2{times}1 structure at 400{degree}C. This transition results from temperature-induced disruption of the c(4{times}2) structure composed of alternately up and down dimers into a structure having all dimers at the same height giving a 2{times}1 symmetry. This arrangement favors electronic orbital overlap between Si top surface atoms leading to surface metallization. {copyright} {ital 1997} {ital The American Physical Society}

• OSTI ID: 554003
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 19 Vol. 79; ISSN 0031-9007; ISSN PRLTAO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL STRUCTURE
ELECTRONIC STRUCTURE
PHASE TRANSFORMATIONS
PHOTOEMISSION
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
TEMPERATURE DEPENDENCE