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Correlation between the ion bombardment during film growth of Pd films and their structural and electrical properties

Journal Article · · J. Vac. Sci. Technol., A; (United States)
DOI:https://doi.org/10.1116/1.571920· OSTI ID:5866287
Pd films were produced in a long mean free path dc triode system using Kr as sputter gas ( p/sub Kr/ = 1 mTorr) and with simultaneous ion bombardment of the growing Pd film. The resulting film properties are related to the energy E/sub n/ delivered by the bombarding Kr ions to the growing film per arriving sputtered Pd atom. Systematic changes of the Kr concentration, the lattice parameter, strain, grain size, preferential orientation, and residual resistivity are observed as a function of E/sub n/. Analysis of the data suggests that, in addition to a possible direct influence of the incorporated Kr, defects produced by the ion bombardment are causing these property changes. This is confirmed by preliminary TEM results revealing a high density of dislocations.
Research Organization:
IBM Research Laboratory, San Jose, California 95193
OSTI ID:
5866287
Journal Information:
J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 1:2; ISSN JVTAD
Country of Publication:
United States
Language:
English