Ion implantation during film growth and its effect on the superconducting properties of niobium

Journal Article · Mon Sep 01 04:00:00 EDT 1975 · J. Appl. Phys., v. 46, no. 9, pp. 4006-4012

DOI:https://doi.org/10.1063/1.322154· OSTI ID:4189963

Heim, G; Kay, E

Low-energy (less than or equal to500 eV) Kr$sup +$ ion bombardment during film growth and its consequences on superconducting properties of Nb are studied in a triode glow discharge sputtering configuration. T/subc/ is depressed from the bulk value at a rate of -0.19 degreeC/at.% dissolved in the lattice. The residual resistivity shows an increase of 3.4 $mu$$Omega$ cm/at.% Kr. It is shown that radiation damage due to ion bombardment dominates the superconducting properties up to 0.2 at.% dissolved, whereas above this Kr concentration, up to approximately 2 at.% Kr, the noble-gas content dominates the transport properties. All films show a dilated lattice which is mainly caused by energetic bombardment during film growth rather than subsequent trapping of the Kr gas.

• Research Organization: IBM Research Laboratory, San Jose, California 95193
• Sponsoring Organization: USDOE
• NSA Number: NSA-33-001333
• OSTI ID: 4189963
• Journal Information: J. Appl. Phys., v. 46, no. 9, pp. 4006-4012, Journal Name: J. Appl. Phys., v. 46, no. 9, pp. 4006-4012; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

*NIOBIUM-- SUPERCONDUCTIVITY
360106* --Materials--Metals & Alloys--Radiation Effects
EV RANGE 100-1000
FILMS
GLOW DISCHARGES
ION IMPLANTATION
KRYPTON IONS
N50240* --Metals
Ceramics
& Other Materials--Metals & Alloys--Radiation Effects
N66200 --Physics (Low Temperature)--Superconductivity
SPUTTERING
SWELLING
TRANSITION TEMPERATURE
TRAPPING