Hydrogen-induced features in the Auger spectra from amorphous silicon
Journal Article
·
· J. Vac. Sci. Technol., A; (United States)
Si-L/sub 23/VV spectra have been measured for hydrogenated amorphous silicon (a-Si:H) surfaces produced by direct ion bombardment (IB) with mixed hydrogen/argon ion beams. Interpretation of the hydrogen-induced features in the loss-corrected, integral spectra could be made by comparisons of the a-Si:H spectra with corresponding spectra from clean ordered Si surfaces, from an ordered dihydride surface system, from amorphous surfaces produced by argon IB, and by comparisons with theoretical density-of-states calculations for a-Si:H. As is the case with the ordered, chemisorbed hydrogen system, hydrogen causes a decrease in intensity on the high energy side of the Auger signal. This decrease indicates a tying off of ''dangling bonds.'' In the a-Si:H system, however, this effect is in competition with the effects of surface damage produced by the IB which can result in a net increase in high energy signal intensity. At lower energies the a-Si:H signals exhibit both of the two broad Si--H bonding features noted for the ordered dihydride surface and a third, weaker feature at still lower energies.
- Research Organization:
- Sandia National Laboratories, Albuquerque, New Mexico 87185
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5865739
- Journal Information:
- J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 1:2; ISSN JVTAD
- Country of Publication:
- United States
- Language:
- English
Similar Records
Real-time ESR observation during film growth of a-Si:H
Auger line-shape analysis of the structure of hydrogenated amorphous silicon
Second harmonic generation analysis in hydrogenated amorphous silicon nitride thin films
Conference
·
Tue Jul 01 00:00:00 EDT 1997
·
OSTI ID:20085524
Auger line-shape analysis of the structure of hydrogenated amorphous silicon
Journal Article
·
Sun Nov 14 23:00:00 EST 1982
· Phys. Rev. B: Condens. Matter; (United States)
·
OSTI ID:6526626
Second harmonic generation analysis in hydrogenated amorphous silicon nitride thin films
Journal Article
·
Sun Jan 07 23:00:00 EST 2007
· Applied Physics Letters
·
OSTI ID:20883264
Related Subjects
36 MATERIALS SCIENCE
360603* -- Materials-- Properties
AMORPHOUS STATE
ARGON IONS
AUGER ELECTRON SPECTROSCOPY
BEAMS
CHARGED PARTICLES
CHEMICAL BONDS
CHEMICAL REACTIONS
CHEMISORPTION
COLLISIONS
ELECTRON SPECTROSCOPY
ELEMENTS
ENERGY-LEVEL DENSITY
HOLES
HYDRIDES
HYDROGEN
HYDROGEN COMPOUNDS
HYDROGEN IONS
HYDROGENATION
ION BEAMS
ION COLLISIONS
IONS
NONMETALS
SEMIMETALS
SEPARATION PROCESSES
SILANES
SILICON
SILICON COMPOUNDS
SORPTION
SPECTROSCOPY
SPUTTERING
SURFACES
SYNTHESIS
VALENCE
360603* -- Materials-- Properties
AMORPHOUS STATE
ARGON IONS
AUGER ELECTRON SPECTROSCOPY
BEAMS
CHARGED PARTICLES
CHEMICAL BONDS
CHEMICAL REACTIONS
CHEMISORPTION
COLLISIONS
ELECTRON SPECTROSCOPY
ELEMENTS
ENERGY-LEVEL DENSITY
HOLES
HYDRIDES
HYDROGEN
HYDROGEN COMPOUNDS
HYDROGEN IONS
HYDROGENATION
ION BEAMS
ION COLLISIONS
IONS
NONMETALS
SEMIMETALS
SEPARATION PROCESSES
SILANES
SILICON
SILICON COMPOUNDS
SORPTION
SPECTROSCOPY
SPUTTERING
SURFACES
SYNTHESIS
VALENCE