Real-time ESR observation during film growth of a-Si:H
Conference
·
OSTI ID:20085524
In-situ electron-spin-resonance (ESR) measurements of film growth of hydrogenated amorphous silicon (a-Si:H) using a remote hydrogen plasma technique have been performed. The Si dangling-bond signal in a-Si:H during and after deposition has been detected, in addition to the gas-phase ESR signals both of atomic hydrogen and photo-excited SiH{sub x} molecules. Dynamic changes of the Si dangling-bond signal intensity were observed when the deposition started and stopped, which has suggested the existence of a subsurface region with higher spin density than that in the bulk region.
- Research Organization:
- Joint Research Center for Atom Technology-National Inst. for Advanced Interdisciplinary Research, Tsukuba, Ibaraki (JP)
- OSTI ID:
- 20085524
- Country of Publication:
- United States
- Language:
- English
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