Pulsed ESR study of light-induced metastable defects in {sup 17}O and {sup 13}C incorporated a-Si:H

Book · Tue Dec 31 04:00:00 EST 1996

OSTI ID:527691

Yamasaki, S; Umeda, T; Tanaka, K ^[1]; Isoya, J ^[1]; Matsuda, A ^[2]

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1. National Inst. for Advanced Interdisciplinary Research, Tsukuba, Ibaraki (Japan). Joint Research Center for Atom Technology
2. Electrotechnical Lab., Tsukuba, Ibaraki (Japan)

Hydrogenated amorphous silicon (a-Si:H) samples containing {sup 17}O (3 {times} 10{sup 19}cm{sup {minus}3}, nuclear spin, I, = 5/2) and {sup 13}C (3 {approximately} 4 {times} 10{sup 17} cm{sup {minus}3}, I = 1/2) isotope impurities were used in the detailed pulsed electron spin resonance (ESR) and pulsed electron-nuclear double resonance (ENDOR) measurements to obtain information on the role of O and C impurities in light-induced metastable dangling bonds in a-Si:H. No hyperfine structure related to {sup 17}O and {sup 13}C atoms was observed in echo detected ESR, electron spin echo envelope modulation (ESEEM) of pulsed ESR as well as pulsed ENDOR (Davies and Mims sequences), which suggests that O and C impurities are not directly involved in the formation of light-induced dangling bonds.

• OSTI ID: 527691
• Report Number(s): CONF-960401--; ISBN 1-55899-323-1
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARBON 13
ELECTRON SPIN RESONANCE
ENDOR
EXPERIMENTAL DATA
ILLUMINANCE
IMPURITIES
MICROSTRUCTURE
OXYGEN 17
POINT DEFECTS
SILICON