Auger line-shape analysis of the structure of hydrogenated amorphous silicon

Journal Article · Mon Nov 15 04:00:00 EST 1982 · Phys. Rev. B: Condens. Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.26.5688· OSTI ID:6526626

Zajac, G; Bader, S D

Calculated Si L/sub 23/VV Auger line shapes are presented for five realistic structural models of hydrogenated amorphous silicon (a-Si:H), based on the local-electronic-structure calculations of Ching, Lam, and Lin. The calculated Auger spectra show peak shifts of the main Si L/sub 23/M/sub 23/M/sub 23/(pp) transition up to 6 eV, and distinct line shapes dependent on the H-bonding configuration. Comparison of the calculated spectra to the experimental work of Allie et al. on sputtered a-Si:H clearly shows an expected increased prominence of the L/sub 23/M/sub 1/M/sub 23/(sp) term relative to the L/sub 23/M/sub 23/M/sub 23/(pp) term, due to the Si 3s localization upon hydrogenation. The results indicate that valuable structural information is available from Auger spectroscopy for this interesting system.

• Research Organization: Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439
• DOE Contract Number: W-31109-ENG-38
• OSTI ID: 6526626
• Journal Information: Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 26:10; ISSN PRBMD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
AMORPHOUS STATE
AUGER EFFECT
CALCULATORS
ELECTRONIC STRUCTURE
EMISSION
HYDRIDES
HYDROGEN COMPOUNDS
LINE WIDTHS
PHOTON EMISSION
PHOTOSENSITIVITY
SENSITIVITY
SILANES
SILICON COMPOUNDS
STRUCTURAL CHEMICAL ANALYSIS