Auger analysis of Si--H bonding and hydrogen concentration in hydrogenated amorphous silicon

Journal Article · Thu May 01 04:00:00 EDT 1986 · J. Vac. Sci. Technol., A; (United States)

DOI:https://doi.org/10.1116/1.573509· OSTI ID:5754148

Nelson, A J; Burnham, N A; Schwartzlander, A B; Asher, S E; Kazmerski, L L

Auger electron spectroscopy line-shape analysis of the Si-L/sub 23/ VV peak has been performed on hydrogenated amorphous silicon (a-Si:H). Both a-Si:H produced by hydrogen implantation of silicon single crystals (for analytical standards) and thin films (fabricated for solar cell applications) were examined in these studies. Hydrogen concentrations were confirmed by secondary ion mass spectrometry, and samples having hydrogen content over the range 10/sup 16/--10/sup 22/ cm/sup -3/ were evaluated. Correlations between the area under the deconvoluted L/sub 23/VV transition peak and the known hydrogen content have resulted in a semiquantitative method of determining hydrogen concentration using Auger analysis. The percentage of the L/sub 23/M/sub 1/M/sub 23/ (sp) transition relative to the L/sub 23/M/sub 23/M/sub 23/ ( pp) transition has been determined and also correlated with the hydrogen concentrations. These results have been compared with previously published theoretical calculations.

• Research Organization: Solar Energy Research Institute, Golden, Colorado 80401
• OSTI ID: 5754148
• Journal Information: J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 4:3; ISSN JVTAD
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501 -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360603* -- Materials-- Properties
AUGER ELECTRON SPECTROSCOPY
CHEMICAL BONDS
DIRECT ENERGY CONVERTERS
ELECTRON SPECTROSCOPY
ELEMENTS
EQUIPMENT
IMPURITIES
ION IMPLANTATION
MASS SPECTROSCOPY
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SPECTROSCOPY