Determination of trace constituents of high-purity gallium arsenide

Journal Article · Sun Jan 01 04:00:00 EST 1984 · Anal. Chem.; (United States)

DOI:https://doi.org/10.1021/ac00265a016· OSTI ID:5863983

Bohn, P W; Bhat, R; Harris, T D

Various schemes for the determination of unintentionally introduced impurities in high-purity GaAs are discussed. The identification of acceptor species is accomplished by measuring the 1s/sub 3/2/-2s/sub 3/2/ splitting of hydrogen-like acceptors. This measurement is made possible by an excited final state relaxation process which is manifested in the luminescence spectrum by a red-shifted replica of the acceptor bound exciton doublet. A technique is described for enhancing this process with respect to the free to bound transitions which make up the background. It involves selectively exciting only those initial states which can give rise to the desired process. Laser excitation wavelength and power density affect the emission intensities of various bound exciton peaks. The implications of these results for quantitative determinations of acceptors are discussed. 20 references, 8 figures.

• Research Organization: Bell Laboratories, Murray Hill, NJ
• OSTI ID: 5863983
• Journal Information: Anal. Chem.; (United States), Journal Name: Anal. Chem.; (United States) Vol. 56; ISSN ANCHA
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400104* -- Spectral Procedures-- (-1987)
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL ANALYSIS
COMPUTERS
DATA
DATA ACQUISITION
DE-EXCITATION
EFFICIENCY
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
EMISSION SPECTROSCOPY
ENERGY-LEVEL TRANSITIONS
EXCITATION
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
IMPURITIES
INFORMATION
LASER RADIATION
MATERIALS
MICROELECTRONIC CIRCUITS
MICROPROCESSORS
NUMERICAL DATA
PNICTIDES
QUANTITATIVE CHEMICAL ANALYSIS
RADIATIONS
RELIABILITY
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
TRACE AMOUNTS