Epitaxial growth of BaZrO{sub 3} films on single crystal oxide substrates using sol-gel alkoxide precursors
- Oak Ridge National Lab., TN (United States)
Epitaxial BaZrO{sub 3} (barium zirconium oxide) films were grown on single crystal substrates. A BaZrO{sub 3} precursor solution was prepared by sol-gel synthesis using an all-alkoxide route. The barium precursors were prepared by reacting barium metal with 2-methoxyethanol, and zirconium precursors were prepared by exchanging ligands between zirconium n-propoxide and 2-methoxyethanol. The resulting BaZrO{sub 3} precursor solution was partially hydrolyzed and spin-coated on sapphire (100), SrTiO{sub 3} (strontium titanium oxide) (100), and LaAlO{sub 3} (lanthanum aluminum oxide) (100) substrates. The films were post-annealed in oxygen at 800 C for 2 min in a rapid thermal annealer. The coating and the annealing procedures were repeated three times to obtain the desired thickness, 300 nm. X-ray diffraction studies showed the presence of a single (100) cube texture for BaZrO{sub 3} films on SrTiO{sub 3} and LaAlO{sub 3} substrates. The BaZrO{sub 3} films grown on sapphire had a random texture. The BaZrO{sub 3} films grown on SrTiO{sub 3} substrates had a sharp texture compared to that on LaAlO{sub 3} substrates. This may be due to the relatively smaller lattice mismatch between SrTiO{sub 3} and BaZrO{sub 3}.
- Sponsoring Organization:
- USDOE Assistant Secretary for Energy Efficiency and Renewable Energy, Washington, DC (United States)
- DOE Contract Number:
- AC05-96OR22464
- OSTI ID:
- 586016
- Journal Information:
- Materials Research Bulletin, Journal Name: Materials Research Bulletin Journal Issue: 12 Vol. 32; ISSN MRBUAC; ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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