Growth of epitaxial LaAlO{sub 3} and CeO{sub 2} films using sol-gel precursors
Conference
·
OSTI ID:216309
- and others
LaAlO{sub 3} and CeO{sub 2} films have been successfully grown using sol-gel precursors. LaAlO{sub 3} precursor solution has been prepared from a metal alkoxide route and spun-cast on a SrTiO{sub 3} (100) single crystal to yield an epitaxial film following pyrolysis at 800{degrees}C in a rapid thermal annealer. A CeO{sub 2} precursor solution has been made using both an aqueous and an alkoxide route.
- Research Organization:
- Oak Ridge National Lab., TN (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC05-96OR22464
- OSTI ID:
- 216309
- Report Number(s):
- CONF-960366--1; ON: DE96009746
- Country of Publication:
- United States
- Language:
- English
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