Characterization of GaN films on sapphire by cathodoluminescence
Book
·
OSTI ID:585808
- Columbia Univ., New York, NY (United States). Dept. of Chemical Engineering, Materials Science, and Mining Engineering
Cathodoluminescence (CL) spectroscopy and microscopy were used to study the luminescent properties of a variety of GaN films, both Si-doped and unintentionally-doped, grown on sapphire substrates. A narrow and intense near band-edge emission was found in the CL spectrum of each film examined, and deep-level emission was also observed for some of the films. The luminescence efficiency of near band-edge emission increased with a faster rate than that of deep-level emission when the pumping current was increased. Spatial nonuniformities of luminescence were observed in monochromatic CL microscopy, and microstructures were observed in scanning electron microscopy. No correlations between luminescence features and microstructural features were seen. Degradation of near band-edge luminescence was observed, accompanied by growth of deep-level emission.
- OSTI ID:
- 585808
- Report Number(s):
- CONF-961202--; ISBN 1-55899-353-3
- Country of Publication:
- United States
- Language:
- English
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