Damped oscillations in reflection high energy electron diffraction during GaAs MBE

Journal Article · Fri Jul 01 04:00:00 EDT 1983 · J. Vac. Sci. Technol., B; (United States)

DOI:https://doi.org/10.1116/1.582684· OSTI ID:5857506

Van Hove, J M; Lent, C S; Pukite, P R; Cohen, P I

Oscillations in the time evolution of electron diffraction during MBE growth of GaAs are shown to be related to periodic variations in the step distributions on GaAs surfaces during epitaxial growth. Unintentionally doped GaAs surfaces were first prepared by MBE. Then the Ga flux is interrupted until an instrument limited diffraction pattern was obtained. During this process the angular width of the specular beam was measured versus time. When the Ga flux there are intensity oscillations that are weak near the Bragg angle. At the Bragg angle, where the diffraction is insensitive to surface steps, the length of the specular RHEED streak does not change. At angles between the Bragg angles, where steps lengthen the streaks, there are periodic variations in the streak length. We interpret the results in terms of a model in which a partially completed surface has a step distribution with smaller average terrace lengths than a completed surface.

• Research Organization: Department of Electrical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
• DOE Contract Number: AC02-80ER10583
• OSTI ID: 5857506
• Journal Information: J. Vac. Sci. Technol., B; (United States), Journal Name: J. Vac. Sci. Technol., B; (United States) Vol. 1:3; ISSN JVTBD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
360603 -- Materials-- Properties
640301 -- Atomic
Molecular & Chemical Physics-- Beams & their Reactions
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ARSENIC COMPOUNDS
ARSENIDES
BRAGG REFLECTION
COHERENT SCATTERING
DIFFRACTION
ELECTRON DIFFRACTION
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
MOLECULAR BEAM EPITAXY
OSCILLATIONS
PNICTIDES
REFLECTION
SCATTERING