Some Aspects of the RHEED Behavior of Low-Temperature GaAs Growth
- Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, P.O. Box 49, H-1525 Budapest (Hungary)
The reflection high-energy electron diffraction (RHEED) behavior manifested during MBE growth on a GaAs(001) surface under low-temperature (LT) growth conditions is examined in this study. RHEED and its intensity oscillations during LT GaAs growth exhibit some particular behavior. The intensity, phase, and decay of the oscillations depend on the beam equivalent pressure (BEP) ratio and substrate temperature, etc. Here, the intensity dependence of RHEED behavior on the BEP ratio, substrate temperature, and excess of As content in the layer are examined. The change in the decay constant of the RHEED oscillations is also discussed.
- OSTI ID:
- 20719607
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 11 Vol. 39; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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