In-segregation measurements by RHEED during growth: comparison between vicinal and nominal substrates
Journal Article
·
· AIP Conference Proceedings
- Universidade Sao Judas Tadeu, Nucleo de Pesquisa em Microeletronica e Dispositivos Optoeletronicos, 03166-000 Sao Paulo, SP (Brazil)
The surface segregation of indium atoms was investigated in situ and in real time by reflection high-energy electron diffraction (RHEED) during molecular-beam epitaxy of InGaAs layers on misoriented GaAs(001) substrates. The strong damping of the RHEED oscillations was quantitatively related to the strength of the segregation process that was found to decrease with increasing miscut angle.
- OSTI ID:
- 21055048
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 893; ISSN APCPCS; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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