Real-time RHEED investigation of indium segregation in InGaAs layers grown on vicinal GaAs(001) substrates
Journal Article
·
· Physical Review. B, Condensed Matter and Materials Physics
- Instituto de Fisica da Universidade de Sao Paulo, Laboratorio de Novos Materiais Semicondutores, CP 66318, 05315-970 Sao Paulo, SP (Brazil)
The surface segregation of indium atoms was investigated in situ and in real time by reflection high-energy electron diffraction (RHEED) during molecular-beam epitaxy of InGaAs layers on misoriented GaAs(001) substrates. The strong damping of the RHEED oscillations was quantitatively related to the strength of the segregation process that was found to decrease with increasing miscut angle.
- OSTI ID:
- 20719623
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 15 Vol. 72; ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
Similar Records
In-segregation measurements by RHEED during growth: comparison between vicinal and nominal substrates
The effect of submonolayer Sn. delta. -doping layers on the growth of InGaAs and GaAs
Silicon-induced faceting of vicinal GaAs(001)
Journal Article
·
Tue Apr 10 00:00:00 EDT 2007
· AIP Conference Proceedings
·
OSTI ID:21055048
The effect of submonolayer Sn. delta. -doping layers on the growth of InGaAs and GaAs
Conference
·
· Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)
·
OSTI ID:7047946
Silicon-induced faceting of vicinal GaAs(001)
Journal Article
·
Fri Sep 15 00:00:00 EDT 2000
· Journal of Applied Physics
·
OSTI ID:20217595