Silicon-induced faceting of vicinal GaAs(001)

Journal Article · Fri Sep 15 04:00:00 EDT 2000 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1289482· OSTI ID:20217595

Brennan, S ^[1]; Stephenson, G B ^[2]; Fuoss, P H ^[3]; Kisker, D W ^[4]; Lavoie, C ^[5]; Evans-Lutterodt, K L ^[6]

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1. Stanford Synchrotron Radiation Laboratory, Stanford Linear Accelerator Center, Stanford, California 94309 (United States)
2. Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
3. AT and T Laboratories, Florham Park, New Jersey 07932 (United States)
4. Cielo Communications, Incorporated, Broomfield, Colorado 80021 (United States)
5. IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States)
6. Lucent Technologies, Murray Hill, New Jersey 07974 (United States)

This article presents in situ x-ray diffraction studies of the evolution of the morphology of 0.5 degree sign -miscut vicinal GaAs(001) surfaces during and following undoped and silicon-doped growth using organometallic vapor-phase epitaxy. Undoped growth leads to ordered monolayer steps. However, growth in the presence of silicon destabilizes this surface morphology and triggers faceting. Coarsening of the facet size proceeds even after the growth has stopped and results in large singular regions of GaAs(001) surface separated by step bunches. Dosing the surface with silicon without growing material does not trigger faceting. Growth of undoped GaAs on faceted surfaces recovers the initial state of ordered monolayer steps. (c) 2000 American Institute of Physics.

• Research Organization: Argonne National Laboratory (ANL), Argonne, IL
• OSTI ID: 20217595
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 6 Vol. 88; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL DOPING
EXPERIMENTAL DATA
GALLIUM ARSENIDES
SILICON
STRUCTURAL CHEMICAL ANALYSIS
SURFACE PROPERTIES
VAPOR PHASE EPITAXY
X-RAY DIFFRACTION