Step bunch assisted two dimensional ordering of In{sub 0.19}Ga{sub 0.81}As/GaAs quantum dots on vicinal GaAs(001) surfaces

Journal Article · Mon Jan 21 04:00:00 EST 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2838453· OSTI ID:21016291

Hanke, M; Wang, Zh M; Mazur, Yu I; Lee, J H; Salamo, G J; Schmidbauer, M ^[1]

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1. Martin-Luther-Universitaet Halle-Wittenberg, Institut fuer Physik, Hoher Weg 8, D-06120 Halle/Saale (Germany)

We have investigated the self-organized, step bunch assisted formation of In{sub 0.19}Ga{sub 0.81}As/GaAs quantum dots in vertical superlattices consisting of one, four, eight, and ten periods. Samples were grown by molecular beam epitaxy on vicinal 2 deg. A and 2 deg. B GaAs(001) substrates. Those with miscut along the [110] (2 deg. B) exclusively show step bunches of an aspect ratio larger than 10 but without the formation of quantum dots. This highly linear pattern is improved during subsequent periods as proved by high resolution x-ray diffraction and grazing incidence diffraction. On the other hand, a miscut along the [110] (2 deg. A) initially causes a crosslike pattern of step bunches, which finally becomes a two-dimensional arrangement of individual quantum dots.

• OSTI ID: 21016291
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 3 Vol. 92; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ASPECT RATIO
CRYSTAL GROWTH
GALLIUM ARSENIDES
INDIUM ARSENIDES
MOLECULAR BEAM EPITAXY
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SUBSTRATES
SUPERLATTICES
TWO-DIMENSIONAL CALCULATIONS
X-RAY DIFFRACTION