Molecular-beam epitaxial growth mechanisms of (Al,Ga)As on vicinal GaAs surfaces: Self-organization and step bunching

Journal Article · Thu Jul 01 04:00:00 EDT 1993 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.586945· OSTI ID:161707

Krishnamurthy, M; Lorke, A; Wassermeier, M ^[1]

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1. Univ. of California, Santa Barbara, CA (United States); and others

The growth mechanisms of (Al,Ga)As lateral superlattices (LSL) on GaAs(100) and GaAs (110) vicinal surfaces were studied using transmission electron microscopy (TEM) and Monte Carlo simulations. In GaAs(100) surfaces, spontaneous formation of a LSL from (AlAs){sub 1} (GaAs){sub 1} short period superlattices; is explained by a vertical exchange reaction model. This mechanism may be the underlying cause of poor lateral segregation in conventional fractional layer (Al,Ga)As LSL. Growth on vicinal GaAs(110) surfaces leads to periodic faceting. Cross-sectional TEM images were compared with simulation of a step-flow model to understand the process of step bunching and the evolution of periodic microfacets. 21 refs., 3 figs.

• OSTI ID: 161707
• Report Number(s): CONF-930115--
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 4 Vol. 11; ISSN JVTBD9; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
GALLIUM ARSENIDES
IMAGES
MOLECULAR BEAM EPITAXY
MORPHOLOGY
SUPERLATTICES
SURFACES
TRANSMISSION ELECTRON MICROSCOPY