Change in the current-carrier concentration upon doping PbTe with gallium

Journal Article · Wed Jul 01 04:00:00 EDT 1987 · Inorg. Mater. (Engl. Transl.); (United States)

OSTI ID:5852796

Bushmarina, G S; Gruzinov, B F; Drabkin, I A; Lev, E Ya; Moizhes, B Ya; Suprun, S G

Upon doping PbTe with gallium, both high-resistivity samples with intrinsic conductivity and low-resistivity samples with electronic conductivity (n/sub e/ = 10/sup 18/ cm/sup -3/) are produced on the PbTe-GaTe section. A thorough investigation of the dependence of the thermo-emf of Pb/sub 1-x/Ga/sub x/Te on the excess Pb and Te side showed the presence of a wide region with intrinsic conductivity. The experimental data can be explained by the fact that impure gallium in PbTe has negative Hubbard energy and stabilizes the Fermi level almost at the center of the forbidden band. At high gallium concentrations, Ga/sub 2/Te/sub 3/ precipitates at first, and then GaTe precipitates as well. The lead forming in excess transforms Ga/sup 3 +/ to Ga/sup +/, which produces the electronic conductivity in the material.

• OSTI ID: 5852796
• Journal Information: Inorg. Mater. (Engl. Transl.); (United States), Journal Name: Inorg. Mater. (Engl. Transl.); (United States) Vol. 23:2; ISSN INOMA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
360603 -- Materials-- Properties
CARRIER DENSITY
CHALCOGENIDES
CRYSTAL DEFECTS
CRYSTAL DOPING
CRYSTAL STRUCTURE
DIAGRAMS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTROMOTIVE FORCE
ELECTRON DENSITY
ELEMENTS
ENERGY
ENERGY LEVELS
ENTROPY
FERMI LEVEL
FORMATION FREE ENTHALPY
FREE ENTHALPY
GALLIUM
LEAD COMPOUNDS
LEAD TELLURIDES
METALLURGICAL EFFECTS
METALS
PHASE DIAGRAMS
PHYSICAL PROPERTIES
POINT DEFECTS
SOLUBILITY
TELLURIDES
TELLURIUM COMPOUNDS
THERMODYNAMIC PROPERTIES
THERMOELECTRIC PROPERTIES
VACANCIES