Silicon-sheet surface studies
Technical Report
·
OSTI ID:5845386
The nondestructive determination of residual stresses in short sections of sheet silicon is discussed. A laser interferometry technique for polished surfaces a shadow Moire technique, for rough surfaces, to determine deflections in sheet silicon and an analysis of extracting residual stresses from measured deflections of circular wafers and short rectangular wafers are discussed.
- Research Organization:
- Illinois Univ., Chicago (USA)
- OSTI ID:
- 5845386
- Report Number(s):
- N-85-15287
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
FABRICATION
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
RESIDUAL STRESSES
SEMIMETALS
SHEETS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
STRESSES
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
FABRICATION
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
RESIDUAL STRESSES
SEMIMETALS
SHEETS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
STRESSES