Effect of internal stresses on the mechanical parameters of silicon wafers

Journal Article · Wed Nov 30 23:00:00 EST 1988 · Inorg. Mater. (Engl. Transl.); (United States)

OSTI ID:5890299

Oksanich, A P; Cherner, V M; Tuzovskii, K A

The authors examined how the mechanical parameters of silicon wafers vary with the stress area. The polished (100) wafers were cut from a billet grown by Czochralski's method. The internal stresses were produced by moving the wafers in and out of an oven having a working zone at 1420 K. Then the oxide film was removed. The area of the stressed parts was determined by photoelasticity. The mechanical parameters were measured with contactless pneumatic loading and continuous central deflection measurement. The internal stresses affect the properties; at a given load the central deflection in an unstressed wafer is larger than in a stressed one.

• OSTI ID: 5890299
• Journal Information: Inorg. Mater. (Engl. Transl.); (United States), Journal Name: Inorg. Mater. (Engl. Transl.); (United States) Vol. 24:7; ISSN INOMA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360103* -- Metals & Alloys-- Mechanical Properties
360104 -- Metals & Alloys-- Physical Properties
CRYSTAL GROWTH METHODS
CRYSTALS
CZOCHRALSKI METHOD
ELASTICITY
ELEMENTS
MATERIALS
MATERIALS TESTING
MECHANICAL PROPERTIES
MONOCRYSTALS
PHOTOELASTICITY
POISSON RATIO
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
STRESS ANALYSIS
STRESSES
TENSILE PROPERTIES
TESTING
YOUNG MODULUS