Silicon sheet technologies

Conference · Wed Sep 01 00:00:00 EDT 1982 · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)

OSTI ID:5368897

Ciszek, T F

A classification of silicon sheet growth methods by meniscus geometry permits them to be discussed in three groups: short meniscus techniques, high meniscus techniques, and extended meniscus or large solid/liquid interface area techniques. A second parameter, meniscus shaper interaction with the liquid silicon, is also instrumental in determining the characteristics of the various sheet processes. The current status of each process is discussed in the context of meniscus geometry and shaper/melt interaction. One aspect of sheet growth, surface area generation rate, is quantitatively compared with combined ingot growth and wafering surface area generation rates.

• Research Organization: Solar Energy Research Institute, Golden, Colorado
• DOE Contract Number: AC02-77CH00178
• OSTI ID: 5368897
• Report Number(s): CONF-820906-
• Journal Information: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States), Journal Name: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States); ISSN CRCND
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501 -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
CRYSTAL GROWTH METHODS
ELEMENTS
FLUIDS
INTERFACES
LIQUIDS
SEMIMETALS
SHEETS
SILICON
SOLIDS
SURFACE AREA
SURFACE PROPERTIES
TECHNOLOGY ASSESSMENT