Direct imaging of interfacial ordering in ultrathin (Si sub m Ge sub n ) sub p superlattices

Journal Article · Mon Feb 11 04:00:00 EST 1991 · Physical Review Letters; (USA)

DOI:https://doi.org/10.1103/PhysRevLett.66.750· OSTI ID:5844696

Jesson, D E; Pennycook, S J ^[1]; Baribeau, J ^[2]

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1. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (US)
2. Institute for Microstructural Sciences, National Research Council of Canada, Ottawa (Canada)

We present the first atomic-resolution images of interfacial ordering occurring in ultrathin (Si{sub {ital m}}Ge{sub {ital n}}){sub {ital p}} superlattices. The observed asymmetric interfacial abruptness is associated with several distinct ordered configurations, which differ from phases considered previously. This is explained by a novel Ge-atom pump mechanism which is chemically driven, and takes place principally at the rebonded edge configuration during type-{ital S}{sub {ital B}} step propagation, leading to lateral (2{times}2) compositional ordering.

• DOE Contract Number: AC05-84OR21400
• OSTI ID: 5844696
• Journal Information: Physical Review Letters; (USA), Journal Name: Physical Review Letters; (USA) Vol. 66:6; ISSN PRLTA; ISSN 0031-9007
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
DIMENSIONS
ELECTRON MICROSCOPY
EPITAXY
GERMANIUM COMPOUNDS
GERMANIUM SILICIDES
IMAGES
INTERFACES
MICROSCOPY
MOLECULAR BEAM EPITAXY
ORDER-DISORDER TRANSFORMATIONS
PHASE TRANSFORMATIONS
RESOLUTION
SCANNING ELECTRON MICROSCOPY
SILICIDES
SILICON COMPOUNDS
SUPERLATTICES
THICKNESS
TUNNEL EFFECT