Interpretation of Raman spectra of Ge/Si ultrathin superlattices
Journal Article
·
· Physical Review, B: Condensed Matter; (USA)
- Division of Physics, National Research Council of Canada, Ottawa, Canada K1A0R6 (CA)
We present a study of Raman scattering by phonons in Ge{sub {ital m}}Si{sub {ital n}}-type ultrathin superlattices. We calculate the Raman spectra of ideal unstrained structures and then successively include strain and interface smudging. The calculations reveal interesting systematics about quasiconfinement. It is shown that quasiconfinement, strain, and interface smudging have to be treated concurrently in the interpretation of observed spectra. The nature of the Ge-Si''-like mode often seen in experimental spectra is elucidated. Using the information base built up from the study of theoretical spectra, we analyze experimental spectra of superlattices grown on Si(100) and Ge(100) substrates to obtain quantitative information useful for structural characterization of the samples studied.
- OSTI ID:
- 6847318
- Journal Information:
- Physical Review, B: Condensed Matter; (USA), Journal Name: Physical Review, B: Condensed Matter; (USA) Vol. 41:8; ISSN PRBMD; ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
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