Direct imaging of ordering in Si-Ge alloys, ultrathin superlattices, and buried Ge layers

Conference · Tue Jan 01 04:00:00 EST 1991

OSTI ID:5542090

Jesson, D E; Pennycook, S J ^[1]; Baribeau, J M ^[2]

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1. Oak Ridge National Lab., TN (USA)
2. National Research Council of Canada, Ottawa, ON (Canada)

We review recent Z-contrast imaging studies of Si--Ge ultrathin superlattices, alloys, and buried Ge layers. It is found that whenever Si is deposited onto a Ge (2 {times} 1) surface, Ge is pumped into the growing Si layer, and this is accompanied by interfacial ordering. This is explained by a novel Ge atom pump mechanism which occurs during MBE growth. Codeposition and alloy growth results in long range {l angle}111{r angle} ordering as a consequence of lateral segregation during nonequilibrium growth. 18 refs., 4 figs.

• Research Organization: Oak Ridge National Lab., TN (USA)
• Sponsoring Organization: DOE; USDOE, Washington, DC (USA)
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 5542090
• Report Number(s): CONF-910406-23; ON: DE91014580
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360102 -- Metals & Alloys-- Structure & Phase Studies
656002* -- Condensed Matter Physics-- General Techniques in Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALLOYS
CRYSTAL GROWTH
CRYSTAL LATTICES
CRYSTAL STRUCTURE
GERMANIUM ALLOYS
IMAGES
INTERFACES
LAYERS
MICROSTRUCTURE
SILICON ALLOYS
SUPERLATTICES